經由軟X光之光電子能譜分析鋁（AI）之2p與銦（In）之4d能階，我們觀察到在室溫下之鋁吸附在半導體砷化銦（110）之表面，並且與銦原子之間發生交換反應。當我們逐漸增加鋁原子之數量達到約12埃的表面厚度，則發現除了有鋁的化合物之外，尚有鋁之金屬團（metallic cluster）形成。同時由銦4d能皆之化學位移（chemical shift）發現當鋁之金屬團形成之時亦有銦之金屬團生成，此即銦原子之表面分凝現象（surface segregation）。

From the soft x-ray photoemission spectra of A1 2p and In 4d core levels, at the room temperature, we observe that AI is adsorbed on the semiconductor InAs(110) surface and has exchange reaction with the In atom. As we increase the thickness of nominal coverage of AI, we find that an aluminum compound exists, and also an aluminum cluster. When we analyze the In 4d spectrum, the indium metallic cluster also exists at the formation of aluminum cluster. This is the so called In surface segregation.

交換反應;分凝現象;介面;光電子光譜學

Exchange reaction;Segregation;Interface;Photoemission spectroscopy